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MRF6P18190HR6 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for w - cdma base station applications with frequencies from 1805 to 1880 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn - pcs/cellular radio and wll applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 2000 ma, p out = 44 watts avg., full frequency band, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 15.9 db drain efficiency ? 27.5% im3 @ 10 mhz offset ? - 37 dbc @ 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 41 dbc @ 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 1880 mhz, 190 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? internally matched, controlled q, for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? designed for lower memory effects and wide instantaneous bandwidth applications ? low gold plating thickness on leads, 40 nominal. ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc total device dissipation @ t c = 25 c derate above 25 c p d 648 3.7 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c cw operation cw 190 w table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 190 w cw case temperature 76 c, 44 w cw r jc 0.27 0.30 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: mrf6p18190h rev. 0, 4/2005 freescale semiconductor technical data MRF6P18190HR6 1805 - 1880 mhz, 44 w avg., 28 v 2 x w - cdma lateral n - channel rf power mosfet case 375d - 05, style 1 ni - 1230 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MRF6P18190HR6 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 250 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.2 adc) v ds(on) ? 0.21 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5.3 ? s dynamic characteristics (1,2) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 2000 ma, p out = 44 w avg., f1 = 1807.5 mhz, f2 = 1817.5 mhz and f1 = 1867.5 mhz, f2 = 1877.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 14.5 15.9 17.5 db drain efficiency d 25.5 27.5 ? % intermodulation distortion im3 ? -37 -35 dbc adjacent channel power ratio acpr ? -41 -38 dbc input return loss irl ? -12 -9 db 1. each side of device measured separately. 2. part is internally matched both on input and output. 3. measurements made with device in push - pull configuration.
MRF6P18190HR6 3 rf device data freescale semiconductor figure 1. mrf6p18190h test circuit schematic rf input c4 r1 c5 c3 v bias r2 b2 b1 c6 c7 z4 z6 z8 z14 c2 z5 z7 z9 z15 c8 z1 z3 dut c10 r3 c11 c9 r4 b4 b3 c12 c13 c15 c16 c17 c18 c19 + c20 + c21 + v supply z16 z20 z22 z24 c14 z17 z21 z23 z25 c22 c23 c24 c25 c26 c27 c28 + c29 v supply rf output z30 z31 v bias z2 z28 z29 z12 c1 z13 r5 z10 z11 z27 z19 c30 z18 z26 z18, z19 0.477 x 0.136 microstrip z20, z21 0.289 x 0.856 microstrip z22, z23 0.215 x 0.385 microstrip z24, z25 0.118 x 0.259 microstrip z26, z27 0.108 x 0.067 microstrip z28 2.163 x 0.067 microstrip z29 1.397 x 0.114 microstrip z30 0.492 x 0.067 microstrip z31 0.207 x 0.067 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 z1 0.700 x 0.067 microstrip z2 1.140 x 0.114 microstrip z3 2.112 x 0.067 microstrip z4, z5 0.174 x 0.067 microstrip z6, z7 0.382 x 0.250 microstrip z8, z9 0.036 x 0.764 microstrip z10, z11 0.178 x 0.764 microstrip z12, z13 0.689 x 0.073 microstrip z14, z15 0.111 x 0.764 microstrip z16, z17 0.124 x 0.856 microstrip + + + + ++ table 5. mrf6p18190h test circuit component designations and values part description part number manufacturer b1, b2, b3, b4 short rf beads 2743019447 fair - rite c1 0.6 - 4.5 pf variable capacitor 27271sl johanson components c2, c8, c14, c22 5.6 pf chip capacitors 100b5r6cp500x atc c3, c9 7.5 pf chip capacitors 100b7r5cp500x atc c4, c10, c18, c26 1k pf chip capacitors 100b102jp50x atc c5, c11 1 f, 50 v tantalum capacitors t491c105k050as kemet c6, c12, c17, c25 0.1 f chip capacitors cdr33bx104akws kemet c7, c13 100 f, 50 v electrolytic capacitors, radial mcr50v107m8x11 multicomp c15, c23 6.8 pf chip capacitors 600b6r8bt250xt atc c16, c24 0.56 f chip capacitors (1825) c1825c564j5rac kemet c19, c20, c27, c28 22 f, 35 v tantalum capacitors t491x226k035as kemet c21, c29 470 f, 63 v electrolytic capacitors, radial mcr63v477m13x26 multicomp c30 0.4 - 2.5 pf variable capacitor 27283pc johanson components r1, r3 1 k , 1/4 w chip resistors (1206) crcw12061001f100 vishay r2, r4 12 , 1/4 w chip resistors (1206) crcw120612r0f100 vishay r5 560 resistor d55342m07b560 vishay
4 rf device data freescale semiconductor MRF6P18190HR6 figure 2. mrf6p18190h test circuit component layout + - + - + - + - cut out area c13 r3 c12 c11 c10 c9 r4 b3 b4 c8 r5 r2 b1 b2 c3 c7 r1 c6 c5 c4 c15 c16 c17 c18 c21 c19 c20 c14 c22 c30 c28 c27 c23 c24 c25 c26 c29 mrf6p18190 rev. 2 c2 c1
MRF6P18190HR6 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?18 ?8 ?12 ?16 1920 1760 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance @ p out = 44 watts 1900 1880 1860 1840 1820 1800 1780 16.5 16.3 ?44 28.2 27.8 ?36 ?38 ?42 d , drain efficiency (%) d 16.1 15.9 15.7 15.6 15.5 16.4 16.2 16 15.8 28 27.6 27.4 ?34 ?40 ?10 ?14 v dd = 28 vdc p out = 44 w (avg.) i dq = 2000 ma, 2?carrier w?cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?18 ?8 ?12 ?16 1920 1760 irl g ps acpr im3 f, frequency (mhz) figure 4. 2 - carrier w - cdma broadband performance @ p out = 88 watts 1900 1880 1860 1840 1820 1800 1780 15.8 15.6 ?32 40.4 39.6 ?26 ?28 ?30 d , drain efficiency (%) d 15.4 15.3 15.1 15 15.7 15.5 15.2 40 39.2 ?24 ?10 ?14 v dd = 28 vdc, p out = 88 w (avg.) i dq = 2000 ma, 2?carrier w?cdma 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) figure 5. two - tone power gain versus output power 13.5 17.5 0.1 i dq = 2600 ma 2300 ma p out , output power (watts) pep 17 16 15 10 100 g ps , power gain (db) 14 2000 ma figure 6. third order intermodulation distortion versus output power 1 p out , output power (watts) pep 100 ?35 ?40 ?45 ?50 ?55 10 intermodulation distortion (dbc) imd, third order ?30 16.5 15.5 14.5 1 1700 ma 1400 ma v dd = 28 vdc, f1 = 1837.5 mhz f2 = 1847.5 mhz, two?tone measurements, 10 mhz tone spacing i dq = 2600 ma 2300 ma 2000 ma 1700 ma 1400 ma v dd = 28 vdc, f1 = 1837.5 mhz, f2 = 1847.5 mhz two?tone measurements, 10 mhz tone spacing 300
6 rf device data freescale semiconductor MRF6P18190HR6 typical characteristics figure 7. intermodulation distortion products versus tone spacing 10 ?60 ?10 0.01 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 190 w (pep), i dq = 2000 ma two?tone measurements, center frequency = 1842.5 mhz 5th order 3rd order ?20 ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) figure 8. pulse cw output power versus input power 44 60 34 p3db = 54.13 dbm (258.82 w) p in , input power (dbm) v dd = 28 vdc, i dq = 2000 ma pulsed cw, 8 sec(on), 1 msec(off) center frequency = 1842.5 mhz 57 55 53 48 36 38 40 42 actual ideal 59 49 32 p out , output power (dbm) 51 im3 (dbc), acpr (dbc) figure 9. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power ?10 ?55 p out , output power (watts) avg. w?cdma 40 ?30 30 20 ?35 ?40 0 ?50 1 10 150 ?45 10 d , drain efficiency (%), g ps , power gain (db) im3 d g ps acpr 500 11 18 0 70 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 2000 ma f = 1842.5 mhz 100 10 16 15 14 13 12 50 40 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw v dd = 12 v g ps , power gain (db) 350 7 17 35 16 10 8 140 13 14 24 v i dq = 2000 ma f = 1842.5 mhz 20 v 16 v 32 v v dd = 28 vdc, i dq = 2000 ma f1 = 1837.5 mhz, f2 = 1847.5 mhz 2 x w?cdma, 10 mhz @ 3.84 mhz bandwidth par = 8.5 db @ 0.01% probability (ccdf) 1 0 56 54 52 50 33 35 37 39 41 43 0.1 p1db = 53.51 dbm (224.38 w) 100 58 ?30 c 25 c t c = 25 c 85 c 25 c ?30 c 85 c t c = ?30 c 85 c 25 c ?30 c 17 60 25 c 85 c 15 12 11 9 70 105 175 245 210 280 315 28 v
MRF6P18190HR6 7 rf device data freescale semiconductor typical characteristics 210 10 10 90 t j , junction temperature ( c) figure 12. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 120 140 160 180 200 mttf factor (hours x amps 2 ) 10 9 100 190 170 150 130 110 typical characteristics w - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 13. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 figure 14. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw ?im3 @ 3.84 mhz bw +im3 @ 3.84 mhz bw ?acpr @ 3.84 mhz bw +acpr @ 3.84 mhz bw probability (%) (db) +20 +30 0 ?10 ?40 ?50 ?60 ?70 ?80 ?20 20 515 10 0 ?5 ?10 ?15 ?20 ?25 2 5 ?30 w?cdma. 3.84 mhz channel bandwidth @ +5 mhz offset. im3 measured in 3.84 mhz bandwidth @ +10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf
8 rf device data freescale semiconductor MRF6P18190HR6 figure 15. series equivalent source and load impedance f mhz z source ? z load ? 1800 1840 1880 3.70 + j2.49 3.45 + j4.12 3.55 + j3.29 3.70 + j1.71 3.40 + j2.75 3.19 + j3.88 v dd = 28 vdc, i dq = 2000 ma, p out = 44 w avg. z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z load f = 1800 mhz z source f = 1800 mhz f = 1880 mhz f = 1880 mhz z o = 5 ? z source z load input matching network device under test output matching network ? ?+ +
MRF6P18190HR6 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor MRF6P18190HR6 notes
MRF6P18190HR6 11 rf device data freescale semiconductor package dimensions case 375d - 05 issue d ni - 1230 notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4
12 rf device data freescale semiconductor MRF6P18190HR6 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6p18190h rev. 0, 4/2005

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